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authorBartlomiej Zolnierkiewicz <b.zolnierkie@samsung.com>2018-04-16 12:11:59 +0200
committerEduardo Valentin <edubezval@gmail.com>2018-05-06 14:36:36 -0700
commite3ed36499bc95658c28557c0f4a6364f30e51bd0 (patch)
tree0aa88d1dc31a4c914c4738533a461bf962c963ce /drivers/thermal
parent09d29426bce847330440ba735880ab0ef595cad2 (diff)
downloadlinux-e3ed36499bc95658c28557c0f4a6364f30e51bd0.tar.bz2
thermal: exynos: remove parsing of samsung, tmu[_min, _max]_efuse_value properties
Since pdata efuse values are SoC (not platform) specific just move them from platform data to struct exynos_tmu_data instance. Then remove parsing of samsung,tmu[_,min_,max]_efuse_value properties. There should be no functional changes caused by this patch. Signed-off-by: Bartlomiej Zolnierkiewicz <b.zolnierkie@samsung.com> Reviewed-by: Daniel Lezcano <daniel.lezcano@linaro.org> Signed-off-by: Eduardo Valentin <edubezval@gmail.com>
Diffstat (limited to 'drivers/thermal')
-rw-r--r--drivers/thermal/samsung/exynos_tmu.c49
-rw-r--r--drivers/thermal/samsung/exynos_tmu.h7
2 files changed, 32 insertions, 24 deletions
diff --git a/drivers/thermal/samsung/exynos_tmu.c b/drivers/thermal/samsung/exynos_tmu.c
index 1fa162dcdf6b..9a0e9610f5e6 100644
--- a/drivers/thermal/samsung/exynos_tmu.c
+++ b/drivers/thermal/samsung/exynos_tmu.c
@@ -185,6 +185,9 @@
* @clk: pointer to the clock structure.
* @clk_sec: pointer to the clock structure for accessing the base_second.
* @sclk: pointer to the clock structure for accessing the tmu special clk.
+ * @efuse_value: SoC defined fuse value
+ * @min_efuse_value: minimum valid trimming data
+ * @max_efuse_value: maximum valid trimming data
* @temp_error1: fused value of the first point trim.
* @temp_error2: fused value of the second point trim.
* @regulator: pointer to the TMU regulator structure.
@@ -207,6 +210,9 @@ struct exynos_tmu_data {
struct work_struct irq_work;
struct mutex lock;
struct clk *clk, *clk_sec, *sclk;
+ u32 efuse_value;
+ u32 min_efuse_value;
+ u32 max_efuse_value;
u16 temp_error1, temp_error2;
struct regulator *regulator;
struct thermal_zone_device *tzd;
@@ -283,20 +289,18 @@ static int code_to_temp(struct exynos_tmu_data *data, u16 temp_code)
static void sanitize_temp_error(struct exynos_tmu_data *data, u32 trim_info)
{
- struct exynos_tmu_platform_data *pdata = data->pdata;
-
data->temp_error1 = trim_info & EXYNOS_TMU_TEMP_MASK;
data->temp_error2 = ((trim_info >> EXYNOS_TRIMINFO_85_SHIFT) &
EXYNOS_TMU_TEMP_MASK);
if (!data->temp_error1 ||
- (pdata->min_efuse_value > data->temp_error1) ||
- (data->temp_error1 > pdata->max_efuse_value))
- data->temp_error1 = pdata->efuse_value & EXYNOS_TMU_TEMP_MASK;
+ (data->min_efuse_value > data->temp_error1) ||
+ (data->temp_error1 > data->max_efuse_value))
+ data->temp_error1 = data->efuse_value & EXYNOS_TMU_TEMP_MASK;
if (!data->temp_error2)
data->temp_error2 =
- (pdata->efuse_value >> EXYNOS_TRIMINFO_85_SHIFT) &
+ (data->efuse_value >> EXYNOS_TRIMINFO_85_SHIFT) &
EXYNOS_TMU_TEMP_MASK;
}
@@ -655,7 +659,6 @@ static int exynos7_tmu_initialize(struct platform_device *pdev)
{
struct exynos_tmu_data *data = platform_get_drvdata(pdev);
struct thermal_zone_device *tz = data->tzd;
- struct exynos_tmu_platform_data *pdata = data->pdata;
unsigned int status, trim_info;
unsigned int rising_threshold = 0, falling_threshold = 0;
int ret = 0, threshold_code, i;
@@ -672,9 +675,9 @@ static int exynos7_tmu_initialize(struct platform_device *pdev)
data->temp_error1 = trim_info & EXYNOS7_TMU_TEMP_MASK;
if (!data->temp_error1 ||
- (pdata->min_efuse_value > data->temp_error1) ||
- (data->temp_error1 > pdata->max_efuse_value))
- data->temp_error1 = pdata->efuse_value & EXYNOS_TMU_TEMP_MASK;
+ (data->min_efuse_value > data->temp_error1) ||
+ (data->temp_error1 > data->max_efuse_value))
+ data->temp_error1 = data->efuse_value & EXYNOS_TMU_TEMP_MASK;
/* Write temperature code for rising and falling threshold */
for (i = (of_thermal_get_ntrips(tz) - 1); i >= 0; i--) {
@@ -1136,13 +1139,6 @@ static int exynos_of_sensor_conf(struct device_node *np,
of_property_read_u32(np, "samsung,tmu_reference_voltage", &value);
pdata->reference_voltage = (u8)value;
- of_property_read_u32(np, "samsung,tmu_efuse_value",
- &pdata->efuse_value);
- of_property_read_u32(np, "samsung,tmu_min_efuse_value",
- &pdata->min_efuse_value);
- of_property_read_u32(np, "samsung,tmu_max_efuse_value",
- &pdata->max_efuse_value);
-
of_property_read_u32(np, "samsung,tmu_cal_type", &pdata->cal_type);
of_node_put(np);
@@ -1196,6 +1192,9 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_read = exynos4210_tmu_read;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 4;
+ data->efuse_value = 55;
+ data->min_efuse_value = 40;
+ data->max_efuse_value = 100;
break;
case SOC_ARCH_EXYNOS3250:
case SOC_ARCH_EXYNOS4412:
@@ -1209,6 +1208,13 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_set_emulation = exynos4412_tmu_set_emulation;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 4;
+ data->efuse_value = 55;
+ if (data->soc != SOC_ARCH_EXYNOS5420 &&
+ data->soc != SOC_ARCH_EXYNOS5420_TRIMINFO)
+ data->min_efuse_value = 40;
+ else
+ data->min_efuse_value = 0;
+ data->max_efuse_value = 100;
break;
case SOC_ARCH_EXYNOS5433:
data->tmu_initialize = exynos5433_tmu_initialize;
@@ -1217,6 +1223,9 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_set_emulation = exynos4412_tmu_set_emulation;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 8;
+ data->efuse_value = 75;
+ data->min_efuse_value = 40;
+ data->max_efuse_value = 150;
break;
case SOC_ARCH_EXYNOS5440:
data->tmu_initialize = exynos5440_tmu_initialize;
@@ -1225,6 +1234,9 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_set_emulation = exynos5440_tmu_set_emulation;
data->tmu_clear_irqs = exynos5440_tmu_clear_irqs;
data->ntrip = 4;
+ data->efuse_value = 0x5d2d;
+ data->min_efuse_value = 16;
+ data->max_efuse_value = 76;
break;
case SOC_ARCH_EXYNOS7:
data->tmu_initialize = exynos7_tmu_initialize;
@@ -1233,6 +1245,9 @@ static int exynos_map_dt_data(struct platform_device *pdev)
data->tmu_set_emulation = exynos4412_tmu_set_emulation;
data->tmu_clear_irqs = exynos4210_tmu_clear_irqs;
data->ntrip = 8;
+ data->efuse_value = 75;
+ data->min_efuse_value = 15;
+ data->max_efuse_value = 100;
break;
default:
dev_err(&pdev->dev, "Platform not supported\n");
diff --git a/drivers/thermal/samsung/exynos_tmu.h b/drivers/thermal/samsung/exynos_tmu.h
index b111a01fd5c1..4c49312b0063 100644
--- a/drivers/thermal/samsung/exynos_tmu.h
+++ b/drivers/thermal/samsung/exynos_tmu.h
@@ -45,9 +45,6 @@ enum soc_type {
* @reference_voltage: reference voltage of amplifier
* in the positive-TC generator block
* 0 < reference_voltage <= 31
- * @efuse_value: platform defined fuse value
- * @min_efuse_value: minimum valid trimming data
- * @max_efuse_value: maximum valid trimming data
* @cal_type: calibration type for temperature
*
* This structure is required for configuration of exynos_tmu driver.
@@ -56,10 +53,6 @@ struct exynos_tmu_platform_data {
u8 gain;
u8 reference_voltage;
- u32 efuse_value;
- u32 min_efuse_value;
- u32 max_efuse_value;
-
u32 cal_type;
};